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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EMD1S THRU EMD4S SINGLE-PHASE GLASS PASSIVATED MINI SUPER FAST SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 200 Volts CURRENT 0.5 Ampere FEATURES * * * * * * * Surge overload rating - 30 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 0.5 gram MD-S MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 1 2 3 4 0.028(0.9) 0.020(0.5) 0.108(2.74) 0.092(2.34) 0.193(4.9) 0.177(4.5) 2.756(7.0) 0.260(6.6) 0.157(4.0) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.193(4.9) 0.177(4.5) o 0.106(2.7) 0.091(2.3) 0.014(0.35) 0.006(0.15) Dimensions in millimeters MAXIMUM RATINGS (At TA = 25 C unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Rectified Current at TA = 30oC - on glass-epoxy P.C.B. ( NOTE 1 ) - on aluminum substrate ( NOTE 2 ) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance ( Note 5 ) Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage Drop per Bridge Element at 0.5A DC Maximum Reverse Current at rated DC Blocking Voltage per element Maximum Reverse Recovery Time (Note 4) @TA = 25 o C @TA = 125 oC SYMBOL VF IR trr EMD1S EMD2S 1.05 10 0.5 50 EMD3S EMD4S UNITS Volts uAmps mAmps nSec 2002-4 IFSM CJ TJ,TSTG 20 15 -55 to + 150 Amps pF 0 o SYMBOL VRRM VRMS VDC IO 0.157(4.0) 0.145(3.6) EMD1S 50 35 50 EMD2S 100 70 100 0.5 0.8 EMD3S 150 105 150 EMD4S 200 140 200 UNITS Volts Volts Volts Amp NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05" (1.3 X 1.3mm) pads. 2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25" (20 X 20 X 6.4mm) mounted on 0.05 X 0.05" (1.27 X 1.27mm) solder pad. 3. Suffix "-S" Surface Mount for Mini Dip Bridge. 4. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 5. Measured at 1MHz and applied reverse voltage of 4.0 volts. 0.152(3.6) MD .004(0.10) MAX. C RATING AND CHARACTERISTIC CURVES ( EMD1S THRU EMD4S ) AVERAGE FORWARD CURENT, (A) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 1.0 Single Phase Half Wave 60Hz Resistive or Inductive Load trr +0.5A (-) PULSE GENERATOR (+) 25 Vdc (approx) (-) D.U.T 0 -0.25A 0.5 (NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( ) 1cm SET TIME BASE FOR 10 ns/cm FIG. 3 - TYPICAL REVERSE CHARACTERISTICS FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (uA) TJ = 150 INSTANTANEOUS FORWARD CURRENT, (A) 100 10 10 TJ = 100 1.0 TJ = 25 1.0 .1 .1 TJ = 25 .01 Pulse Width = 300uS 1% Duty Cycle .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .001 0 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT, (A) JUNCTION CAPACITANCE, (pF) 35 30 25 20 15 10 5 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 8.3ms Single Half Sine-Wave (JEDEC Method) 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) 100 TJ = 25 RECTRON Mounting Pad Layout 0.272 MAX. (6.91 MAX.) 0.105 (2.67) 0.095 (2.41) 0.023 MIN. (0.58 MIN.) 0.030 MIN. (0.076 MIN.) Dimensions in inches and (millimeters) RECTRON |
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